Glossary

M-type
Morphological type, classified based on the shape of the neuron
E-type
Electrical type, classified based on the firing behavior of a neuron
ME-type
Morpho-electrical type, a combination of an m-type and e-type
S-type
Synapse type
Morphological instance
One particular morphology of a certain m-type
E-model
Electrical model, typically for a specific e-type
ME-model
Electrical model in combination with a morphological instance
Intrinsic
Efferent fibres arising from within the neocortical microcircuit
Extrinsic
Efferent fibres arising from outside the neocortical microcircuit
Synaptic contact
A direct apposition between the axon and dendrites or soma
Synaptic connection
The set of all synaptic contacts between the presynaptic axon and the postsynaptic dendrites or soma
Synaptic connection-type (pathway)
The set of all connections between pairs of neurons of pre and postsynaptic m-types
Common neighbor bias

The common neighbor bias is a measure of the tendency of neurons to form clusters that are more strongly interconnected than expected. It is similar to the clusterin coefficient, but has been generalized in the following ways: First, it takes the directionality of connectivity into account. Second, it can also characterize the connectivity between two disjunct populations of neurons. Third, it takes into account (i.e. it normalizes for) the distance-dependence of connectivity between neurons.

Formally, the measure characterizes by how much the number of neighbors in the graph of synaptic connectivity is increased for a pair of neurons when a connection exists between the pair. Traditionally, the tendency has been expressed as "the connection probability between the pair increases with the number of common neighbors", but this assertion is functionally identical to "the number of common neighbors is higher for connected pairs". The measurement is defined for a combination of source population (S), target population (T) and neighbor population (N). The neighbor population specifies which neurons are considered as potential common neighbors; from source and target population we pick the pairs of neurons to analyze, where the pair is considered to be "connected" if at least one synaptic connection exists from the neuron in the source to the neuron in the target population. Here, we used as the neighbor population the entire model, i.e. any neuron is considered a potential common neighbor. Finally, one can calculate the effect on pre- or postsynaptic common neighbors.

The bias is then calculated as follows: First, a "raw bias" is calculated as the ratio of the mean number of (pre- or postsynaptic) common neighbors for connected pairs divided by the value for unconnected pairs. To take into account the effect of distance-dependence, the value is normalized using a control model: All considered pairs are grouped into distance bins with a width of 50 um. Then, the numbers of common neighbors for pairs are shuffled within each bin. The ratio of raw bias to bias in the control model is the "normalized bias". A second approach aims to measure the effect of distance-dependence and connectedness at the same time: Based on sampled from all pairs, we fit a linear model as follows:
CN = x * C + y * D, where CN is the number of common neighbors (pre- or postsynaptic) of a pair, D the distance between them, and C is 1 for a connected pair, or 0 otherwise. The value of x is then serves as a measure of the common neighbor bias ("fit-based bias").

Branch order
The number of bifurcations between an axonal or dendritic section and the soma. Branch order is denoted by °. For e.g., 1° refers to the first dendritic branch originating from the soma or the main apical dendrite
Path distance
The distance between a given section and the soma measured along the axon or dendrites
Innervation pattern
A histogram of the locations of synapses measured by branch order or path distance
Neuronal convergence
The total number of neurons of one m-type targeting a single neuron of another m-type
Neuronal divergence
The total number of neurons of one m-type targeted by a single neuron of another m-type
Resting membrane potential (Vm)
The membrane potential (in mV) of a single neuron when potential (Vm) electrically inert or in resting state
Membrane time constant (τm)
The time taken (in ms) for the neuronal membrane to charge or discharge
Input resistance (Rin)
Is given by Ohm's law from the difference in membrane potential of a single neuron at the point of a current injection to after it has reached a steady state (Rin=∆V/∆I MΩ)
gsyn
The peak conductance (in nS) for a single synaptic contact
U
Utilization of synaptic efficacy - analogous to the transmitter release probability at a single synaptic contact
D
Time constant (in ms) for recovery from depression
F
Time constant (in ms) for recovery from facilitation
PSP
The postsynaptic membrane potential change (in mV) evoked by a presynaptic stimulus; typically an injection of a brief pulse or a train of pulses to the presynaptic soma
PSP Latency
The onset time (in ms) measured as the difference between the time to peak of the presynaptic AP and time taken to reach 5% of peak PSP amplitude
PSP Amplitude
The difference in the membrane potential (in mV) measured between the peak and baseline
PSP rise time
The mean time (in ms) to rise from 20% to 80% of peak PSP amplitude
PSP decay time constant
The mean time (in ms) to decay from peak PSP amplitude to baseline constant
Transmission failure of PSP
An event where the presynaptic stimulus fails to evoke a postsynaptic response
C.v. of PSP
The coefficient of variation of the PSP amplitude measured as the ratio of SD and mean

List of features

AHP_depth
Relative voltage values at the first after-hyperpolarization (docs)
AHP_depth_abs
Absolute voltage values at the first after-hyperpolarization (docs)
AP1_amp
The relative height of the 1st action potential from spike onset (docs)
AP2_amp
The relative height of the 2nd action potential from spike onset (docs)
AP_amplitude
The relative heights of all the action potentials from spike onset (docs)
AP_duration_half_width
Width of spike at half spike amplitude (docs)
APlast_amp
The relative height of the last action potential from spike onset (docs)
ISI_CV
The coefficient of variation of the ISIs (docs)
Spikecount
Number of spikes in the trace, including outside of stimulus interval (docs)
burst_number
The number of bursts (docs)
decay_time_constant_after_stim
The decay time constant of the voltage right after the stimulus (docs)
inv_fifth_ISI
1.0 over fifth ISI (docs)
inv_first_ISI
1.0 over first ISI (docs)
inv_fourth_ISI
1.0 over fourth ISI (docs)
inv_last_ISI
1.0 over last ISI (docs)
inv_second_ISI
1.0 over second ISI (docs)
inv_third_ISI
1.0 over third ISI (docs)
inv_time_to_first_spike
1.0 over time to first spike (docs)
maximum_voltage_from_voltagebase
Difference between maximum voltage during stimulus and voltage base (docs)
mean_frequency
The mean frequency of the firing rate (docs)
ohmic_input_resistance_vb_ssse
The ratio between the voltage deflection (between voltage base and steady-state voltage at stimend) and stimulus current (docs)
time_to_first_spike
Time from the start of the stimulus to the maximum of the first peak (docs)
time_to_last_spike
Time from the start of the stimulus to the maximum of the first peak (docs)
time_to_second_spike
Time from the start of the stimulus to the maximum of the second peak (docs)
voltage_after_stim
The mean voltage after the stimulus in (stim_end + 25%*end_period, stim_end + 75%*end_period) (docs)
voltage_base
The average voltage during the last 10% of time before the stimulus (docs)
voltage_deflection
The voltage deflection between voltage base and steady-state voltage at stimend (docs)
voltage_deflection_begin
The voltage deflection between voltage base and steady-state voltage soon after stimulation start (docs)
threshold_current
The minimal amplitude (in nA) of a step current clamp injection that triggers an action potential
holding_current
The current clamp amplitude (in nA) necessary to hold the cell at a predefined holding voltage

List of single cell stimulus protocols

IDRest
Step current injection in soma. Current amplitude is a percentage of the rheobase
APThreshold
Ramp current inject in soma. Current amplitude is a percentage of the rheobase
APWaveform
High resolution (higher sampling frequency) short step current injection in soma. Typically elicits 1 or 2 action potentials

List of m-types

DAC
Descending Axon Cell
NGC-DA
Neurogliaform Cell with dense axonal arborization
NGC-SA
Neurogliaform Cell with slender axonal arborization
HAC
Horizontal Axon Cell
LAC
Large Axon Cell
SAC
Small Axon Cell
MC
Martinotti Cell
BTC
Bitufted Cell
DBC
Double Bouquet Cell
BP
Bipolar Cell
NGC
Neurogliaform Cell
LBC
Large Basket Cell
NBC
Nest Basket Cell
SBC
Small Basket Cell
ChC
Chandelier Cell
TPC
Tufted Pyramidal Cell
SS
Spiny Stellate Cell
TPC:A
Thick-tufted Pyramidal Cell with a late bifurcating apical tuft
TPC:B
Thick-tufted Pyramidal Cell with an early bifurcating apical tuft
UPC
Untufted Pyramidal Cell
TPC:C
Small-tufted Pyramidal Cell
TPC_L4
Tufted Pyramidal Cell with apical dendrites terminating in layer 4
TPC_L1
Tufted Pyramidal Cell with apical dendrites terminating in layer 1
IPC
Pyramidal Cell with inverted apical-like dendrites
BPC
Pyramidal Cell with bipolar apical-like dendrites
HPC
Pyramidal Cell with horizontal apical-like dendrites

List of s-types

I1
Inhibitory, facilitating
I2
Inhibitory, depressing
I3
Inhibitory, pseudo-linear
E1
Excitatory, facilitating
E2
Excitatory, depressing
E3
Excitatory, pseudo-linear

List of e-types

cADpyr
Continuous Accommodating (Adapting) for pyramidal cells
cAC
Continuous Accommodating
bAC
Burst Accommodating
cNAC
Continuous Non-accommodating
bNAC
Burst Non-accommodating
dNAC
Delayed Non-accommodating
cSTUT
Continuous Stuttering
bSTUT
Burst Stuttering
dSTUT
Delayed Stuttering
cIR
Continuous Irregular
bIR
Burst Irregular

E-Types

Spike Characteristics

Firing Behavior